Development of Beta Gallium Oxide on Large Area Substrates
Abstract
?-Ga2O3 is a remarkable material as it has the combination of a large direct bandgap,exceptionally high breakdown field, and high electron mobility. Other than diamond, ?-Ga2O3has the largest bandgap of any semiconductor to show natural n-type conductivity. The overallgoal of this program is to is to develop ?-Ga2O3 on scalable substrate orientations including(001) by plasma-assisted molecular beam epitaxy (PAMBE) at UCSB. The program willspecifically focus on optimization of unintentionally doped films, n-type films via candidateshallow donors Ge and Si, and intentionally compensated films via deep acceptors such as Mg.Traps in the material will be determined by deep level spectroscopies at Ohio State University.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA95501810059
Entities
People
- James A. Speck
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of California, Santa Barbara