Fundamental Mechanisms and Control of Dielectric Breakdown in Electronic Materials
Abstract
This work will center on two classes of oxides: (1) metal- oxide ceramics such as ZnO and TiO2 and (2) complex oxides such as SrTiO3 and BaTiO3 Extensions to other wide band gap semiconductors such as Ga2O3 are envisioned. This new project will build on demonstrated capabilities to control defects in related materials using thermal annealing, high electric field gradients, and applied mechanical strain. We can now achieve near-state-of-the-art RF performance in MBE-grown Ba0.5Sr0.5TiO3 by systematically reducing native point defects using air annealing at optimum temperatures, i.e., high enough to remove almost all defects but not too high to create more defects or decompose the material. The understanding gained from this workwill expand the scientific understanding of high electrical field applications and may lead to new material processing and interface designs that increase the thermodynamic stability of electronic devices under extreme electric field conditions.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 09, 2018
- Source ID
- FA95501810066
Entities
People
- Leonard J Brillson
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force