Time-domain investigation of phonon decay and phonon-plasmon mode properties in wide bandgap semiconductors and semiconducting heterostructures.
Abstract
Decay of longitudinal and transverse optical phonons and hybrid (phonon-plasmon) modes in technologically important wide-bandgap semiconductor materials will be studied. Raman active modes with an equivalent sub-wavenumber will enable spectral resolution to detect fine alterations of the phonon mode properties because of coupling to plasma fields, crystal potential modulation by impurities, defects, and dislocations caused by lattice mismatch at interfaces. The results should be of high value both from the standpoints of fundamental physics in understanding electronic and transport properties of the materials and for identifying mechanisms that limit transport parameters that are critical for device applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 19, 2018
- Source ID
- FA95501810273
Entities
People
- Feruz Ganikhanov
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Rhode Island