Understanding Extreme Environment Stability of Wide Band Gap (WBG) B-Ga2O3
Abstract
Group III wide band gap (WBG) oxide, Beta-Ga2O3, is considered an ideal crystal for high powerelectronics at extreme environments due to its high band gap, high breakdown voltage, and highresistivity to applied electric field and temperature. Despite such superior characteristics, defectscurrently limit the performance of Beta-Ga2O3 at extreme environments. This understanding will beachieved using advanced scanning/transmission electron microscopy imaging and spectroscopyunder high temperature and electric field. In particular, the focus of this study is to: 1) Investigatethe atomic, chemical, and interfacial structure of ?-Ga2O3 in the bulk and epitaxial form and probethe intrinsic chemical and atomic structure of the defects as well as native and intentional dopants.2) Determine the stability and transition dynamics of the atomic, chemical, and electronic structurein the bulk and epi thin film of Beta-Ga2O3 under extreme temperature and/or electric field. 3)Determine the failure mechanisms in Beta-Ga2O3 devices under high electric field at small size scales. This fundamental study can bridge the gap between the atomic scale structural modifications and macroscale materials functionality in Beta-Ga2O3 as well as the family of WBG oxides.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 11, 2018
- Source ID
- FA95501810277
Entities
People
- Nasim Alem
Organizations
- Air Force Office of Scientific Research
- Pennsylvania State University
- United States Air Force