Exploiting Ultrafast Carrier Transfer in Van der Waals Heterostructures for THz Optoelectronics
Abstract
Semiconductor devices are ubiquitous in modern electronics and optoelectronics, playing critical roles in the Information Age. As device length scales progressively shrink, pushing the limits of silicon technology, new materials and structures have to be explored to advance technology in the Post-Silicon Era. The family of two-dimensional (2D) semiconductors, transitional metal dichalcogenides (TMDCs) in particular, represents one such solution that has inspired the recent surge of interest in electronic and optoelectronics applications because of their attractive physical scaling and unique properties at the atomically thin limit. The project will seek to engineer van der Waals (vdW) heterostructures based on two-dimensional materials for ultrafast photocurrent generation, and we plan to investigate the unique carrier dynamics in vdW heterostructure, which is fundamentally different from that in conventional semiconductors. The proposed research is intended to enhance understanding of this novel material structure and enable the building block for the next-generation high-speed electronic and optoelectronic devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 11, 2018
- Source ID
- FA95501810312
Entities
People
- Sufei Shi
Organizations
- Air Force Office of Scientific Research
- Rensselaer Polytechnic Institute
- United States Air Force