AlGaN and AlGaN-based quantum wells: towards high-power high-frequency electronics
Abstract
The project focuses on investigation of AlGaN-based ultrawide-bandgap materials and heterostructures towards high-frequency and terahertz electronics. Development of technologies based on these materials is critical towards the USAF needs for high-speed and high-power devices and circuits for use in key system applications including surveillance, electronic warfare, all-weather navigation, non-destructive testing, security inspection, multifunctional RF systems for communications, as well as power applications. The proposed research effort contains theoretical as well as experimental work, and it aims to address fundamental questions in relation to AlGaN. Furthermore, it intends developing novel ultrafast quasi-optical characterization techniques. AlGaN samples will be obtained through collaborators performing epitaxial growth. In addition, the project will take advantage of the advanced nanofabrication equipment available at the University of Utah Nanofabrication Facility as well as the materials characterization tools available at the Utah Surface Analysis and Nanoscale Imaging Labs and the ultraviolet and terahertz ultrafast laser capabilities available at the principal investigator’s laboratory.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 28, 2018
- Source ID
- FA95501810332
Entities
People
- Berardi Sensale-Rodriguez
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Utah