Computationally-Guided Discovery of Semiconductors with Axis-Dependent Conduction Polarity - Goniopolar Materials
Abstract
In this proposal, we combine theory, synthesis and electronic measurements to identify and create new classes of semiconductors that simultaneously conduct n-type and p-type carriers along orthogonal crystallographic axes. Almost all current semiconductors exhibit a single kind of electronic behavior across different crystallographic, typically dictated by the substitution of a small number of dopant atoms that make them either electron-rich (n-type) or electron-deficient (p-type). Most semiconductor technologies including transistors, light-emitting diodes, and solar cells require integrating together different materials or p-type n-type doped regions to achieve functionality. However, many of these devices fail under extreme temperatures due to the diffusion of these dopant atoms at the interfaces. Thus, creating single crystal materials that can conduct p-type and n-type carriers along different directions enable entirely novel device technologies that function under extreme conditions. However, it is not understood how to design such a material, and only one such semiconductor (Re4Si7) has been discovered, serendipitously.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 11, 2018
- Source ID
- FA95501810335
Entities
People
- Joshua E Goldberger
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force