The strain-stress relationships for band gap, phonon and plasmon energies in monoclinic Ga2O3 and related materials
Abstract
The outcome of the proposed work will substantially expand our fundamental knowledge in solid state physics. It is anticipated that phenomena unknown from previous semiconductor research will be detected and described such as the changes of polarization direction of longitudinal phonon-plasmon coupled modes with strain, or the dependencies of the anisotropic charge carrier mobility in monoclinic lattices under strain. The outcome of this proposed work may affect the improvement of contemporary epitaxy methods and may lead to new conceptual designs of future semiconductor devices structures.A large set of samples with various anticipated states of epitaxial strain is available to the PI from active collaborators. This proposal aims at determining the strain deformation potential and stress (pressure) parameters. The PI uses the generalized ellipsometry and optical Hall effect methods. Both methods were pioneered and developed by the PI, and successfully applied for complete characterization of strain-free monoclinic gallium oxide. Both methods are ideally suited to determine the anisotropic properties of low symmetry semiconductor materials in epitaxial layer structures.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 11, 2018
- Source ID
- FA95501810360
Entities
People
- Mathias Schubert
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Nebraska system