Fabrication, Processing and Characterization of Contacts to Ga2O3 with Enhanced Thermal Stability
Abstract
Gallium oxide (Ga2O3) is an ultra-wide bandgap semiconductor that is expected to push theoperating boundaries for a variety of electronic and optoelectronic applications. Its extremeproperties and recent availability as commercial single-crystal substrates provide the potential totransform future device technologies associated with high-power/high-frequency/hightemperatureelectronics and optoelectronics operating in the ultraviolet (UV) region. Although ohmic and rectifying (Schottky) electrical contacts have been demonstrated on Beta-Ga2O3, the contacts are generally unstable at elevated temperatures; this issue is a critical problem for stable performance of high power devices based on Ga2O3. In this context, in this collaborative research project, investigators at the University of Texas at El Paso (UTEP) and Carnegie Mellon University(CMU) propose to design, develop and characterize ohmic and rectifying contact metallizationswith enhanced thermal stability to Ga2O3.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 11, 2018
- Source ID
- FA95501810387
Entities
People
- Ramana Chintalapalle
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Texas at El Paso