(MURI 18) Gallium Oxide Materials Science and Engineering GAME
Abstract
?-Ga2O3 is the largest bandgap (~4.5 eV) semiconductor that can be grown directly from themelt in single crystal form. The ease of n-type doping with tetravalent cations, and a widevariety of bulk single crystal and epitaxial film growth techniques have triggered worldwideinterest in ?-Ga2O3. The predicted breakdown electric field (6-8 MV/cm) is higher than that ofGaN or SiC (~3 MV/cm), which when combined with electron mobility (predicted 250-350cm2/Vs) yields amongst the best figures of merit for power electronic devices. As a result, ?-Ga2O3 possesses transformative potential for not only power electron devices but also highfrequency devices, and deep UV optoelectronics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 28, 2018
- Source ID
- FA95501810479
Entities
People
- James A. Speck
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of California, Santa Barbara