Effects of Redox, Molecular, and Ionic Dopants on the Structure and Electronic Behavior of Haloplumbate Perovskites
Abstract
This proposal focuses on developing a fundamental understanding of the effects of redox, ionic, and molecular dopants on the properties of the bulk and interfaces (including grain boundaries) of haloplumbate perovskites. We seek to develop novel methods for p- and n-doping haloplumbate perovskites, both in bulk and at surfaces (both at contacts and grain boundaries within films); and to understand the effect that molecular p- and n-dopants have on perovskite photophysical and electronic properties; and how this impacts photovoltaic performance. We will examine whether dopant redox levels are best positioned within or outside the perovskite band gap, what the pros and cons of different doping methods are, and explore if doping can lead to new applications for 2D and 3D haloplumbate perovskites. In addition we will develop crosslinked p-doped polymeric hole-transport layers and perform studies to determine if these can provide for stable and reproducible performance in high-efficiency perovskite photovoltaic cells. The work brings together a team of chemists and physicists with the ultimate goals of increasing our understanding of the factors that determine the performance of perovskite materials in solar cells, which have broad DoD applications for portable power, and may also open new areas of application for these materials.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 19, 2018
- Source ID
- FA95501810499
Entities
People
- Seth Marder
Organizations
- Air Force Office of Scientific Research
- Georgia Tech Research Corporation
- United States Air Force