(MURI 18) Fundamentals of Doping and Defects in Ga2O3 for High Breakdown Field Electronics
Abstract
We propose to undertake a highly synergistic approach with rigorous interaction and feedbackloops between theory, materials synthesis, and characterization efforts to gain a comprehensiveunderstanding of the materials science of ?-Ga2O3. The project is organized into three pillars ofinvestigation composed of highly collaborative research tasks. In Pillar 1, we will work towardsdefinitively understanding intrinsic and extrinsic point defects and structural defects in terms ofstructure and properties. In Pillar 2 we will develop methods for materials growth and processingto control defects produce heterostructures and study their properties. In Pillar 3 we willinvestigate defects and transport especially in extreme conditions of temperature and field.We are aided by collaborations with Saint-Gobain and Synoptics in terms of crystal growthand characterization and with Dr. Joel Varley (LLNL) for theoretical insights. Additionally, wewill actively seek synergistic collaborations with researchers at DOE and DoD national labs andopportunities to leverage our proposal through user facilities.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 24, 2019
- Source ID
- FA95501810507
Entities
People
- Michael A. Scarpulla
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Utah