Energy-efficient Sub-5-nm Magnetic Tunneling Junctions
Abstract
The objective is to use non-traditional nanofabrication approaches to build spin-transfer torque (STT) basedmagnetic tunneling junctions (MTJs) in the 2-nm size range with the goal to leverage the new electron spinphysics and exploit many unprecedented capabilities of spintronic/nanomagnetic devices in this size rangefor next-generation energy-efficient information processing. Such devices have advantages of nonvolatilityin both logic and memory, ultra-low power consumption, radiation hardness, and capability for3D integration. However, many promising theoretical predictions for these devices have never been realizedbecause of the difficulty to build and test such small devices. In the sub-5-nm size range, device propertiesbecome governed by quantum mechanics. The spin excitation’s lifespan significantly increases, which inturn due to the resulting dramatically increased spin accumulation and other quantum-mechanical effects,leads to anomalous magnetotransport effects even at room temperature. Understanding the underlyingphysics in this size range is crucial for discovering and building next-generation spintronic devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 24, 2019
- Source ID
- FA95501810527
Entities
People
- Sahkrat Khizroev
Organizations
- Air Force Office of Scientific Research
- Florida International University
- United States Air Force