Trapped hole diffusion in semiconductor nanocrystals and its impact on oxidation photochemistry
Abstract
Semiconductor nanocrystals have potential applications in optoelectronic devices and light driven chemistry. The goal of the research proposed here is to measure, quantify, predict, and control how surfaces of semiconductor nanocrystals impact excited state relaxation and charge transfer processes that are relevant for light driven catalysis. The focus in this three year funding period builds on a recent discovery made by our team: trapped hole diffusion on nanocrystal surfaces. The proposed work will combine experimental synthetic and spectroscopic work from the Dukovic group with theoretical and computational modeling led by co PI Joel Eaves. Through a combination of synthetic, spectroscopic and theoretical efforts, we will probe the mechanism of trapped hole diffusion, connect trapped hole diffusion to light driven oxidation chemistry, and develop methods to rationally control hole transport through synthetic manipulation of the nanocrystal surfaces. The knowledge gained will provide ways to efficiently funnel holes to surface adsorbed catalysts, opening a path toward light driven oxidation catalysis.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910083
Entities
People
- Gordana Dukovic
Organizations
- Air Force Office of Scientific Research
- Regents of the University of Colorado
- United States Air Force