Investigation of electrically injected room temperature GeSn lasers
Abstract
To fully realize optoelectronics integration on silicon platform, an efficient coherent light emission source has been explored extensively. The most commonly adopted approach, hybrid bonding of a III V laser to a silicon on insulator substrate complicated system integration with high cost. On the other hand, integration using the nanomembrane approach offers many advantages. Meanwhile, engineering the Ge band structure towards a direct bandgap semiconductor by a direct bandgap Column IV alloy GeSn growth has demonstrated the potential light emission capability. However, all the reported GeSnbased lasers can only operate under optical pumping and low temperature conditions. The PI proposes two types double heterostructures with large band offsets and use them to investigate electrically injected room temperature GeSn lasers. The double heterostructures hold greater promise for room temperature operation due to its enhanced charge carrier confinement for both electrons and holes and enhanced optical confinement. To implement the two heterostructures, the PI proposed to integrate transferrable nanomembranes by use of single crystal semiconductor nanomembrane release, transfer, and bonding techniques. To form the GeSn double heterostructures, the PI plans to employ the feasibility proven lattice mismatched heterostructure to overcome the interface engineering challenges. Upon the success of formation of the heterostructures, electrically injected room temperature GeSn lasers using transferrable nanomembranes is to be further investigated. Two types of lasers structures will be investigated: edge emitting lasers and vertical cavity surface emitting lasers.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910102
Entities
People
- Zhenqiang Ma
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Wisconsin System