Cubic Boron Nitride: A New Extreme Semiconductor by Ion beam Assisted Chemical Vapor Deposition
Abstract
We propose to investigate ultra wide bandgap (UWBG) cubic boron nitride (c BN) for extreme applications such as high voltage power electronics, and radiation detection. Both n type and p type polarity conduction are required to fully realize the full potential of this indirect gap semiconductor. Many UWBG materials suffer from the limitation that either one, or both polarities of dopant levels are too deep to be practical in real power electronics, which require high current levels. Prior work on non optimized samples indicates that shallow n type (Si doping), and p type (Beryllium doping) are possible in c BN, making it a unique outlier among the UWBG’s. In this work, we will investigate doping and compensation strategies to evaluate the promise as well as measure the basic physical-electronic properties of c BN, such as mobility and critical breakdown field as a function of the defect morphology. This work will involve both single crystals and in house grown thin films.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910122
Entities
People
- Michael Spencer
Organizations
- Air Force Office of Scientific Research
- Morgan State University
- United States Air Force