Stannate Perovskite Semiconductor Materials for Novel High Power Devices
Abstract
Perovskite based materials are of great interest due to their multitude of unique properties. However, traditional perovskite materials such as SrTiO3 (STO) have not found significant applications in field effect transistors due to their relatively poor electrical conductivity at room temperature. The stannate perovskite material system, which consists of semiconductors with chemical formula of ASnO3, have been shown to have much higher conductivity than STO, and possess many other important properties that make them ideal candidates to realize a wide range of novel high performance electronic devices. The purpose of this project is to analyze the fundamental material properties of the stannate based perovskite oxide material system that are important to enable novel electronic devices. In the early portion of the program, the focus will be on exploring the material properties of the wide gap material SrSnO3.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910245
Entities
People
- Steven J Koester
Organizations
- Air Force Office of Scientific Research
- Regents of the University of Minnesota
- United States Air Force