Fundamental Nanoscale Materials Physics for High Speed Electronics
Abstract
This project will explore nanometer scale quantitative charge carrier density changes, local electronic phase separations, interface states, and defects of wide band semiconductors, complex and correlated perovskites, and hybrid 2D-3D semiconductor heterostructures. This will be achieved using a unique combination of high resolution terahertz (THz) nano imaging, scanning near field microscope, scanning probe microscopes, and tip enhanced Raman spectroscopy with diffraction unlimited spatial resolution (approx. 20 nm). Far field spectroscopy methods such as infrared spectroscopy and low temperature (down to 4 K) confocal microscopy will also be used. Specific research objectives include i) We will develop a quantitative, contact free carrier density and conductivity nanometer scale characterization method at THz frequencies for probing surfaces and interfaces of materials for high speed electronics applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910252
Entities
People
- Yohannes Abate
Organizations
- Air Force Office of Scientific Research
- The University of Georgia
- United States Air Force