Understanding Superacid Interaction on Semiconductor-Oxide Interfaces for Mobility Enhancement in THz Applications
Abstract
Moore’s law suggests that silicon complementary metal oxide semiconductor field effect transistors (MOSFETs) are scaling down to realize more functionality, higher speeds and lower costs. Maintaining this trend has been very challenging due to the difficulty in reducing operating voltages and decreasing power consumption. Thus, continuing this progress will require developing new materials and devices that can deliver high current density at a low voltage. Possible candidates for materials are III V materials since they offer excellent motilities and tremendous band edge alignments; and possible contenders for replacing the current silicon MOSFETs are III V transistors. These III V transistors require oxides with high permittivity, but thermodynamically stable native oxides on III V s are lacking. Although the first III V MOSFETs were demonstrated over 30 years ago, progress in finding an appropriate oxide has been slow until only recently. This stems from the difficulty in finding the perfect high permittivity oxide that yields an unpinned Fermi level interface. Thus, solving this III V-oxide interface problem is pivotal to developing high performance III V transistors.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910297
Entities
People
- Yuping Zeng
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Delaware