Spectroscopic Imaging of Defects Using Radiation Actuated Scanning Electron Microscopy
Abstract
Defects and nanostructures embedded in bulk materials or heterostructures play vital roles in manipulating the electronic, optical, mechanical, chemical, thermal and magnetic properties of materials. To achieve fundamental understanding of the interactions and interplay of electrons, photons, phonons and other quasiparticles between defects and their host materials (e.g., wide bandgap semiconductors), it is critical to image and characterize these structures with ultrahigh spatial (~1nm) and energy (? 1 meV or GHz THz) resolutions. Historically, this has proven to be extraordinarily difficult. Past attempts based on either photoexcitations or electron excitations have either had high surface sensitivity but low lateral resolution or high lateral resolution but poor surface sensitivity. Here we propose a new approach which uniquely combines optical and electron beams to achieve spectroscopic imaging of defects and nanostructures. If successful, this would open the door to an entirely new way to probe defects, single molecules, and nanostructures, and thereby offer the promising prospects to significantly advance the field of defect and quantum engineering of nanostructured materials.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910309
Entities
People
- Arun Majumdar
Organizations
- Air Force Office of Scientific Research
- Stanford University
- United States Air Force