Neutron reflectometry and X ray scattering studies on dopant injection dynamics into correlated nickelates
Abstract
Strongly correlated oxides such as perovskite nickelates present an opportunity for basic research to understand fundamentals of electron interactions in solids as well as potential applications in DoD relevant electronics such as neuromorphic computing and reconfigurable devices. One of the fascinating properties of the nickelate family is the ability to induce temperature independent massive electronic phase transitions (metal insulator transitions with change in resistivity modulation spanning 10 orders of magnitude under ambient conditions) by carrier doping of Ni eg orbitals, also referred to as filling controlled Mott transition. The extent of doping required to cross electronic phase boundaries is of the order of a fraction of an electron to 1 electron - unit cell. Such high carrier densities are required to screen electron correlations that can be in the range of several eV. It is therefore of importance to understand fundamentals of dynamics of injection of dopants into such semiconductors, strain evolution and structural relaxation of the metastable electronic phases formed as dopants are incorporated under electric fields.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910351
Entities
People
- Shriram Ramanathan
Organizations
- Air Force Office of Scientific Research
- Purdue University
- United States Air Force