Fundamental Study of p Type Doping in MOCVD Grown Ga2O3
Abstract
This proposal is for a 3 year comprehensive study of the p doping of Ga2O3 layers to be carried out by a team of three Co PIs with extensive experience growing, doping, and characterizing wide bandgap oxides. Under an EAGER grant from the National Science Foundation they have spent the last two years extensively studying Ga2O3 material and devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 14, 2022
- Source ID
- FA95501910410
Entities
People
- Manijeh Razeghi
Organizations
- Air Force Office of Scientific Research
- Northwestern University
- United States Air Force