METASTABLE OXIDES FOR HIGH-MOBILITY AND SPIN-ORBIT 2D ELECTRONICS
Abstract
High-speed wideband communications rely on devices that can operate in the GHz and THz regime for electronic switching, making the engineering and materials challenges for these systems very different from those of traditional integrated circuits for computers. Electronic switches for Air Force applications such as radar and satellite communications must operate at frequencies above 10 GHz, which has led to the development of epitaxial thin film materials that employ a two-dimensional electron gas (2DEG). THz sources with sub-millimeter wavelengths rely on generation of radiation using 2DEGs. Far greater electron mobilities and concentrations are required for these applications, opening the door for new classes of materials that outperform conventional semiconductors. Complex metal oxides are promising in this regard, as they can sustain much greater doping levels than traditional semiconductors. BaSnO3 is an intriguing complex oxide for such 2DEGs because its s-electron conductivity produces room temperature mobility > 100 cm2/V-sec. However, integrating BaSnO3 with other oxides is a challenge because of the inability to transfer sufficient electron concentrations across an interface into BaSnO3. For THz oscillators, materials with strong spin-orbit coupling such as 5d transition metals are also desirable to produce spin-Hall nanooscillators.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010034
Entities
People
- Ryan Comes
Organizations
- Air Force Office of Scientific Research
- Auburn University
- United States Air Force