(YIP) INVESTIGATION OF ELECTRON TRANSPORT IN B-(AI, GA)203 THIN FILMS AND HETEROSTRUCTURES UNDER APPLIED HIGH PRESSURES
Abstract
Wide bandgap-based RF and power electronics are going to define many crucial “more-electric” transportation systems and communication systems including RADAR. Underlying this success is the enhanced efficiency in conversion processes afforded by wide bandgap materials from kHz to GHz. The need is currently being served by Si and GaN, but the requirements are even beyond the performance of these systems. Nonetheless, producing large sale, cost-effective, and high quality GaN and (to a lesser extent) SiC substrates remains the major challenge in the development roadmap of power electronics based on these wide bandgap materials. Gallium Oxide is the most promising material to provide the next step in performance based on availability of cost efective, large area, high quality substrates. However, it will not be successful unless, there is a thorough investigation f materials science and electron transport.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010045
Entities
People
- Elaheh Ahmadi
Organizations
- Air Force Office of Scientific Research
- Board of Regents of the University of Michigan
- United States Air Force