(DURIP) MOLECULAR BEAM EPITAXY SYSTEM FOR GALLIUM OXIDE
Abstract
?-Ga2O3 is the largest bandgap (~4.8 eV) semiconductor that can be grown directly from the melt in single crystal form. The ease of n-type doping with tetravalent cations, and a wide variety of bulk single crystal and epitaxial film growth techniques have triggered worldwide interest in ?- Ga2O3. The predicted breakdown electric field (6-8 MV/cm) is higher than that of GaN or SiC (~3 MV/cm), which when combined with electron mobility (predicted ~200-300 cm2/Vs) yields amongst the best figures of merit for power electronic devices. Molecular beam epitaxy (MBE) is an ultrahigh vacuum (UHV) growth technology that is used for the growth of the highest quality layers for scientific study and DoD-relevant device technology.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010051
Entities
People
- James S. Speck
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of California, Santa Barbara