PERFORMANCE ENHANCEMENT OF ROBUST GAN MOSHFETS BY FERROELECTRIC DIELECTRIC AND NEGATIVE CAPACITANCE EFFECT (PERFECT)
Abstract
Our goal of this proposed AFOSR project is to develop process technology and fundamental understanding on III-N based negative capacitance (NC) and ferroelectric (FE) metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) for high speed applications in harsh environments. We will fabricate, characterize and integrate a much broader range of devices on III-N compound semiconductors enabled by a foundational understanding of negative capacitance dielectric. We will investigate the potential of atomic layer deposited (ALD) ferroelectric hafnium oxides to address critical issues to propel advanced hetero-junction devices to new levels of performance, manufacturability and reliability. We envision conceiving and prototyping devices uniquely designed to take advantage of novel ALD processes and materials and demonstrate deep sub-100nm III-N NC MOSHFETs with near THz operation and III-N FE MOSHFETs for harsh environmental applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010116
Entities
People
- Peide Ye
Organizations
- Air Force Office of Scientific Research
- Purdue University
- United States Air Force