LIGHT-MASS-ATOM SEMICONDUCTOR MATERIALS AND DEVICES
Abstract
Since 1990s, increasing the energy bandgaps of semiconductor materials from ~1eV in Si and GaAs to ~3.4 eV in GaN and SiC has created new revolutionary applications arenas in high-speed and high-power RF electronics and in solid-state lighting and lasers. A similar revolution is in the making as we transition from ~3.4 eV in GaN and SiC to ~6 eV in AlN, BN, and related materials, made of light-mass atoms, with extreme bandgaps (xBGs). The critical breakdown fields in these materials are far higher than GaN and SiC. The atoms in these extreme-gap materials are light, which makes their thermal conductivity very high. The high sound velocity in them is comparable to low-field electron velocities, which will enable novel acousto-electric and electro-mechanical devices that exploit the strong piezoelectric and spontaneous polarization in them.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010148
Entities
People
- H. Grace Xing
Organizations
- Air Force Office of Scientific Research
- Cornell University
- United States Air Force