LOCAL STRAIN CONTROL OF GROUP-IV PHOTONIC-MATERIALS
Abstract
Mission: SiGeSn is a far-from-equilibrium system which for decades has stymied researchers who have tried to tame it. Sn’s large atom size leads to significant miscibility strain issues, which have prevented the materials large scale adaptation. We will determine synthesis and processing techniques for SiGeSn with significant Sn concentrations and examine the resulting optoelectronic properties: band structure, optical properties, and carrier dynamics. We will fabricate prototype devices using these optimized materials. Innovation: The scientific insight we develop will yield transformative capabilities for process control, material growth, and device fabrication for SiGeSn systems. The fundamental science and engineering efforts we propose are critical to achieving this level of control; without it, materials will continue to be fabricated by guess-and-check methods, which are not only inefficient, but often not effective. Anticipated Outcome: Our process will allow us to explore the possible phase space for regions of metastable Sn compounds and gain a greater understanding of the materials physics and the process of segregation in far-from-equilibrium systems. We will create low defect density, high Sn content material that can be fabricated into a wide range of optoelectronic devices; e.g. photoconductors, photodiodes, LEDs, lasers, and PVs. Impact on DoD Capabilities: The realization of SiGeSn as a fully utilizable materials system will allow profound advances in several technologies critical to DoD capabilities and beyond; for example, a CMOS-compatible photonic system will change the way information is sent/received in devices. It will enable the creation of 1) smart-pixel, multi-modal, FPAs to reduce cost, size, weight, and power consumption; 2) photodetectors sensitive across the infrared for use in freespace communication and LADAR; 3) remote hyperspectral imaging; and 4) IR countermeasures (IRCMs).
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010188
Entities
People
- Thomas E. Vandervelde
Organizations
- Air Force Office of Scientific Research
- Tufts University
- United States Air Force