OPTOELECTRONIC VALLEY-SPIN QUBITS WITH AMBIPOLAR QUANTUM DOTS
Abstract
The research objective of this proposal is to develop and evaluate valley-spin qubits based on ambipolar, gate-defined quantum dots in transition metal dichalcogenides (TMDs). We will combine best practices developed in the PI’s lab and the broader community to incorporate high-quality TMDs into van der Waals heterostructures with metal gates above and below to define quantum dots within the TMD layer. Crucially, recent progress in the PI’s group has demonstrated that both n-type and p-type quantum dots can be formed using gates in TMDs. This breakthrough will permit the fabrication of ambipolar double quantum dots that will provide an optoelectronic interface for the creation, manipulation, and readout of qubits based on the valley and spin degrees of freedom in TMDs. Quantum states will be selected, tuned, and optimized using electronic transport, then optical control will provide ultrafast manipulation of those states. Single-photon emission will ultimately provide a natural interconversion between stationary and flying quantum information, which combined with advances in nanophotonics and heterogeneous integration, will allow this technology to be compactly scaled into large quantum processors. The devices evaluated in this project will provide first steps toward a new platform for quantum information applications of interest to the US Air Force.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010207
Entities
People
- Hugh Churchill
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Arkansas System