EXPLOITING STRONG DRIVING FOR NEXT GENERATION QUANTUM DEVICES
Abstract
This proposal aims to exploit a surprising recently discovered analogy between the well-known properties of metals and insulators and the dynamics of strongly driven qubits in order to design next generation qubit devices. The starting point for this approach is the quantum Hall effect observed in electronic insulators, wherein the measurable conductance is quantized to such high precision that it has become the standard used to define the units of resistance. Exploiting the analogy leads to a qubit device which pumps energy at quantized rate which is controllable by the qubit state. This research aims to develop further quantum devices by extending the analogy to more regimes. Specific applications include improving diamond-based quantum sensors for local magnetic field sensing and developing new superconducting circuit elements which improve read-out and routing of quantum information. Techniques will also be developed to improve the diamond-based sensors using dynamical control theory.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010235
Entities
People
- Anushya Chandran
Organizations
- Air Force Office of Scientific Research
- Boston University
- United States Air Force