TOWARDS DISSIPATION-LESS CONDUCTION IN OXIDE TOPOLOGICAL INSULATORS
Abstract
We propose to develop a new class of topological insulators based on oxide materials that will enable dissipation-less conduction and electronics at elevated temperatures. Dissipation-less conduction at elevated temperatures will vastly improve energy efficiency of existing microelectronics but also overcome issues associated with miniaturization and improve response times. Until the discovery of topological insulators, dissipation-less conduction was limited to superconductors below their critical temperature. While superconductors are a viable option for dissipation-less conduction, they are subject to disorder and hence defect scattering. Topological insulators provide dissipation-less conduction that is symmetry-protected and therefore robust to disorder.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2021
- Source ID
- FA95502010293
Entities
People
- Yuri Suzuki
Organizations
- Air Force Office of Scientific Research
- Stanford University
- United States Air Force