PECASE: Atomic-scale characterization of layered magnetic materials

Abstract

Antiferromagnets are promising materials for the next generation of fast, compact, low-power memory storage technologies. A key challenge in the development of memory devices based on antiferromagnets is the lack of characterization methods that can directly correlate the magnetic ordering and domain structure of antiferromagnetic materials with the atomic structure and defects. Such techniques are particularly important because the domain structure of antiferromagnets are thought to be dominated by the presence of defects, strains, and magnetoelastic effects. This proposal will develop a new suite of characterization based on transmission electron microscopy to probe antiferromagnetic materials at length scales between 0.1 and 100 nm.

Document Details

Document Type
DoD Grant Award
Publication Date
Aug 12, 2021
Source ID
FA95502010302

Entities

People

  • Pinshane Huang

Organizations

  • Air Force Office of Scientific Research
  • United States Air Force
  • University of Illinois Urbana–Champaign

Tags

Fields of Study

  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics