Surface Control of Electronic Structure in Oxide Based Heterointerfaces
Abstract
Case Western Reserve University proposes to develop a comprehensive approach to investigate environmental interactions of oxide based hetero-interfaces as it relates to the origin of the charge carriers in the buried interface, workfunction development controlling electron emission, and tunability of the interfacial conductivity through quantitative analysis of the surface. In ultra-thin films, the buried hetero-interface couples with the surface of the film that is merely a couple of nanometers away. This requires the treatment of the system as two interfaces. Surface, as a solid gas interface, is a function of the termination structure of the solid, as well as the composition of the gas. Polarization discontinuity and the resulting dipolar field across the film thickness, intermixing, local point defect types and distribution, and interfacial strain at the buried interface all provide an opportunity to design new systems for a targeted outcome. Origin of charge carriers, as well as their mobility, workfunction of the film surface, the tunability of the buried interface conductivity, and the dipolar field across the thickness of the film has to be considered in both at a local scale and global (i.e., averaged) scale since the local physics may be different than the overall macroscopic properties measured.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA95502110005XX0
Entities
People
- Alp Sehirlioglu
Organizations
- Air Force Office of Scientific Research
- Case Western Reserve University
- United States Air Force