Probing Fundamental Electronic Phenomena at 2D-3D Heterointerface Junctions
Abstract
Heterojunctions are a key element in a majority of modern electronic and opto-electronic devices ranging from electrical contacts to transistors to lasers, diodes and photodetectors. Contact and interface engineering has been paramount and one of the most difficult challenges in silicon as well as compound semiconductor based optoelectronics which often limits device performances. The emergence of two-dimensional (2D) materials has revolutionized the conception and design of electronic heterostructures. The van der Waals bonding combined with dangling bond and oxide free surfaces are a fundamental departure from buried interfaces of 3D lattice matched multi-layer stacks or diffusion doped contact layers and junctions. However, there has been little fundamental understanding on the nature of these van der Waals contacts. While, numerous studies have been performed on all 2D van der Waals hetero-layers, realistic devices will involve interfacing 2D materials with 3D semiconductors or metals. Here, we propose to investigate the fundamental properties of interfaces between 2D layers and 3D materials from the perspective of electronic device applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502110035
Entities
People
- Deep Jariwala
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Pennsylvania