Strain control topological quantum materials

Abstract

In modern information technology, the canonical way to tune the electronic properties of materials is the electrostatic gating. However, for materials with complex quantum phases electrostatic gating alone is not as effective simply because there are far greater number of carriers involved than a typical semiconductor. Elastic strain distorts the crystal lattice and modulate electronic structures up to very high energy scale. Strain also couples directly to quantum phases that break the crystalline symmetry and switch the ground state via phase competition. In the past three years, the PI has demonstrated the strain control superconductor to metal transition and the topological phase transition. Boosted by these previous breakthroughs, the propose research will create the necessary building blocks for a strain control topological quantum technology.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 07, 2023
Source ID
FA95502110068

Entities

People

  • Jiun-Haw Chu

Organizations

  • Air Force Office of Scientific Research
  • United States Air Force
  • University of Washington

Tags

Fields of Study

  • Physics

Readers

  • Educational Psychology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing