Fundamental studies of InAlN-GaN HEMTs on Si substrate
Abstract
The next-generation of communication systems, including 5G and beyond, vehicles and internet of things needs components operating at mm-wave bands with low cost and high efficiency. GaN high electron mobility transistor (HEMT) technology is one of the potential candidates, due to the high electron mobility and wide-bandgap features. However, to date, GaN-on-silicon HEMTs DC and RF performances still need to be drastically improved. Here, we propose to develop high-performance InAlN GaN-on-Si HEMTs with nanowire as the channel by using innovative material, process, and device-design techniques and to be able to evaluate the device linearity and temperature stability.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502110076
Entities
People
- Yuping Zeng
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Delaware