MURI Fundamentals of Doping and Defects in b-Ga2O3 for high breakdown field (MURI)
Abstract
MURI Team will investigate delta doping of Gallium Oxide and Aluminum Gallium Oxide on insulating and conducting bulk substrates. In YR1- YR3, we have made progress in controlling the delta doping on (010) ?-Ga2O3 bulk substrates including achieving sharp delta doping profiles along (010) direction by controlling the surface riding of Si dopants. (1) In YR4- YR5, MURI Team will study the effect of surface orientation on surface riding of Si dopants, including sharpness/abruptness of delta doping via a theory-guided approach. At the end of the project, we anticipate to elucidate MOVPE techniques and science of sharp delta doping in beta-Gallium Oxide, including electronic properties (mobility), defect structures (DLTS- Scarpulla, TEM- Alem), Optical Hall Effect (Schubert) and electrical breakdown characteristics. (2) By tuning the period and charge in delta-doped layers, electron wavefunction in multiple period delta-doped Ga2O3 will be engineered to enhance mobility of delta-doped Ga2O3 compared to uniformly doped bulk Ga2O3. (3) Upon gaining a comprehensive understanding of the science of delta-doping in Ga2O3, we will extend the idea to delta doping in Aluminum Gallium Oxide. This is particularly interesting as it provides a potential opportunity to enhance the breakdown of the channel without a significant drop in electron mobility, as phonon-limited scattering is expected to dominate over alloy scattering.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA95502110078XX0
Entities
People
- Michael A. Scarpulla
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Utah