Dislocations as nature s quantum wires

Abstract

Dislocations are non-equilibrium but topologically-defi ned line-defects in crystals. Within them, atoms are often forced into complex arrangements that contradict chemical rules-ofthumb in solids. This provides a pathway to stabilize exotic phases of matter otherwise impossible to form. Our overarching goal is to establish a new paradigm of materials design by unifying the disparate research communities of metallurgy and functional electronic-magnetic materials towards a common goal- the rational design of 1D quantum materials based on dislocations. Treating dislocations as active materials is a fundamental change in perception and drastic departure from current materials development in quantum electronic materials, where the perpetual goal is to eliminate (not create) extended defects. Instead, we leverage nature s tendency to form dislocations, and tailor the composition and arrangements of these 1D topological features based on knowledge from the mechanical metallurgy where the mechanical properties of materials are governed by creation and motion of dislocations and their interactions with impurities.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 07, 2023
Source ID
FA95502110278

Entities

People

  • Maryam Ghazisaeidi

Organizations

  • Air Force Office of Scientific Research
  • Ohio State University
  • United States Air Force

Tags

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing