Modeling of Traps and Additive Phase Noise in Ultra-Wide Band-Gap Semiconductor Technology
Abstract
Defects remain a nagging problem in the rapidly developing ultra-wide bandgap semiconductor technologies. The RF operation of the devices fabricated with these semiconductors are deeply affected by defect dynamics. An efficient technique for the accurate characterization of these trapping phenomena is needed to develop a comprehensive physical understanding of these processes and permit the development a compact model accounting for these dynamic effects that can be used by circuit designers. Presently large-signal RF models must be inconveniently developed for each operating point at which the devices are to be used. In addition, these models cannot predict the trap dynamics taking place for modulated RF signals since the operating point dynamically changes with the history of the modulation. A cyclostationary model first developed to understand the variation of phase noise in Silicon oscillators with the history of the device operating point will be used to realistically model the trap dynamics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502110290
Entities
People
- Patrick Roblin
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force