Scanning Maxwell Stress Microscopy for UHV Applications
Abstract
MIT proposes to build a Scanning Maxwell Stress Microscope (SMM) for research on vacuum nanoelectronics (VNE) devices intended for application to RF, IR, Deep UV, ion and neutron sources and nano vacuum channel transistors (NVCTs). The instrumentation will not only enhance the ability to fabricate low cost and reliable devices but it will also allow measurements that will provide a fundamental understanding of the physical mechanism of the problems that have prevented the realization of reliable high performance sources based on VNE. The SMM will allow the simultaneous characterization of the surface potential, the field factor, ?, and it’s distribution f(?), providing information for design of high performance, long lifetime and reliable electron emitters. The optimization of fundamental device parameter such as the field factor will allow the increase of field emission array tip density from 106 tips - cm2 to 2.5 x 109 tips - cm2 and will also increase cathode life from less than 1 hour to over 10,000 hours. The proposed program will enable the development of compact and efficient high power amplifiers and sources that operate in the sub millimeter wave (sub-MMW) frequency band, electron beam pumped deep UV sources and nano vacuum channel transistors that are capable of operating in harsh environments.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502110296
Entities
People
- Akintunde Akinwande
Organizations
- Air Force Office of Scientific Research
- Massachusetts Institute of Technology
- United States Air Force