Semiconducting AlN: A New Pathway to High Voltage, Power and Temperature Ultra-Wide Bandgap Power Electronic Components
Abstract
Georgia Institute of Technology proposes a fundamental science investigation with three main goals: 1) to understand and fully optimize a recent discovery of p-type conductivity in AlN that resulted in 1000 times higher electrical carrier concentration than in the literature and the only instance of p-type bulk AlN currently known; 2) using several proposed approaches, expand the doping in AlN to include n-type analogues of the present p-type innovation; and 3) building on the new AlN conductive doping capability and contact technologies to facilitate 15+ KV power rectifiers that will enable a new generation of ultra-high voltage DC to DC converters useful in a wide variety of power conversion applications ranging from reduced size and weight, medium to ultra-high power converters, distribution high voltage transfer points, renewable energy inverters and transfer switches to transportation power electronics including air surveillance and combat drones. Based on these advances, Ga Tech will demonstrate p-n and p-i-n diodes along a pathway to the ultimate high voltage rectifying devices, a Junction Barrier Schottky (JBS) based AlN diode critical for ultra-high voltage/temperature power conversion. The influence on the semiconductor scientific community will be immediate and impactful. Likewise, as these proposed fundamental science studies progress enabling the proposed devices, DOD, energy, and environmental impacts will multiply as high voltage, high temperature, high power, and high energy electronics and optoelectronic devices utilize the never before accessible ultrawide bandgap aspects of AlN.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA95502110318XX0
Entities
People
- W. Alan Doolittle
Organizations
- Air Force Office of Scientific Research
- Georgia Tech Research Corporation
- United States Air Force