Engineering Superconductivity in Germanium

Abstract

Stabilizing a superconducting phase in group IV elements has been elusive in experiments over the past three decades. Nevertheless, there have been numerous efforts to create superconducting phases in Si and Ge. For example, it has been known that Si can exhibit a superconducting phase when hyperdoped with Gallium and Boron. Hyperdoping above the solid solubility limits requires non-equilibrium methods, such as pulsed laser irradiation and ion implantation with subsequent annealing near melting temperatures. We propose to study the nature of superconductivity in Ge bulk and two-dimensional (2D) films. We investigate the effect of disorder which can be the driving factor in creating a metallic to superconducting quantum phase transition. The ultimate goal of the project is to provide a transparent and uniform superconductor-semiconductor interface in homoepitaxy of Ge to create a platform for making Josephson junction devices.

Document Details

Document Type
DoD Grant Award
Publication Date
Jan 21, 2022
Source ID
FA95502110338XX0

Entities

People

  • Javad Shabani

Organizations

  • Air Force Office of Scientific Research
  • New York University
  • United States Air Force

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing