UV Photostimulation Effects on Semiconductor Defects and Transport
Abstract
Recently there is interest in using UV or above band gap photoexcitation to controllably manipulate semiconductor properties such as structure, defect distribution, and carrier concentration. A number of experimental investigations report intriguing effects of steady state UV photoexcitation on semiconductor properties. For example, carrier concentrations are an order of magnitude larger in wide band gap material AlN when annealed under UV photostimulation, and ionic conductivities in halide perovskites are enhanced by several orders of magnitude under UV photostimulation. While experimental observations are growing, there remains no clear understanding of the key mechanisms by which photoexcitation may modify important semiconductor properties.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA95502110353XX0
Entities
People
- Elif Ertekin
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Illinois Urbana–Champaign