Search for deep center defects for quantum applications in ZnSe
Abstract
North Carolina State University propose that first principles simulation coupled with a point defect informatics framework and a point defect equilibrium toolset can provide valuable information in the search for novel defect centers. This data would also aid understanding the origin of optical signatures measured in the semiconductors being explored for quantum information applications. Here, we propose a focus on point defects in ZnSe (low temperature direct bandgap is 2.82 eV) with selective extension to the ZnMgSe alloy. In addition to its wider direct bandgap, ZnSe has many advantages including the ability to grow isotopically pure single crystals with a neutral spin bath. While there have been many advances in excitonic based single photon source in quantum wells of this material, the defect landscape has not been extensively explored and characterized from a first principles perspective using modern hybrid exchange-correlation functionals. Herein, we will utilize a suite of tools to efficiently explore the point defect landscape in ZnSe.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502110383
Entities
People
- Douglas L Irving
Organizations
- Air Force Office of Scientific Research
- North Carolina State University
- United States Air Force