Surface structure and electrical characteristics of epitaxially grown Ga2O3
Abstract
The aim of this project is to investigate the structural and electronic characteristics of epitaxially grown Ga2O3 films and interfaces as a function of temperature. X-ray photoelectron diffraction will be used to provide information on the surface atomic structure of thin films. This technique measures the intensity of photoelectrons as function of azimuthal and polar angles. The end result is a diffraction pattern that can uniquely identify atomic structure. We propose investigating the evolution of ?-Ga2O3 through XPD analysis. Through a collaboration with Dr. Tyson Back (AFRL) some simulated XPD patterns have been calculated. The next step would be to compare the simulated models with experiments to be conducted at AFRL. Experiments at AFRL will be conducted as a function of temperature. These experimental results will be used along with modelling and simulation conducted in our lab in Brazil. Results are expected to elucidate the evolution of this phase as function of temperature.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA95502110440XX0
Entities
People
- Alexandre Pancotti
Organizations
- Air Force Office of Scientific Research
- United States Air Force