Radiation Effect in Electronic Materials, Circuits, Devices, and Systems: Theoretical Study of Electronic Transport and Thermalization
Abstract
We propose to employ full-band Monte Carlo simulations of 1. electron transport in semiconductor devices in the presence of radiation damage and 2. of the thermalization of radiation-generated carriers below about 100 eV. The devices we propose to study are based on a variety of materials, depending on the intended applications: Mainly Si (FETs) and nitrides (GaN/AlGaN, RF devices) but, conditionally, also III-V compound semiconductors (Ga-In/As-Sb alloys, FETs and photodetectors), GaInP/Ga(In)As/Ge (photovoltaic cells), and ultra-widegap ones.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 21, 2022
- Source ID
- FA95502110461XX0
Entities
People
- Massimo V. Fischetti
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Texas at Dallas