(DURIP) GROWTH AND IN SITU CHARACTERIZATION OF THIN FILMS OF VAPOR PRESSURE MISMATCHED PEROVSKITE CHALCOGENIDES
Abstract
Perovskite chalcogenides, especially transition metal perovskite chalcogenides (TMPCs), have desirable electronic and optical properties for several Department of Defense (DoD) relevant applications such as portable power sources, light weight and flexible electronic and photonic platforms, especially emerging infrared sensing, imaging, and surveillance devices. TMPCs leverage the large density of states due to transition metal d-orbitals, and large structural and chemical flexibility to seamlessly tune the physical properties to enable these broad applications. Currently, the growth and physical property studies on these materials are limited to bulk polycrystals and single crystals. Hence, it is necessary to develop thin film growth methods to realize high performance electronic and photonic devices and understand the low dimensional phenomena occurring in these materials, which remains of fundamental interest. One of the greatest challenges to thin film growth of perovskite chalcogenides is the large vapor pressure mismatch between the transition metal (and other cationic species) and chalcogen. To overcome this issue, we propose to use a hybrid pulsed laser deposition (PLD) – molecular beam epitaxy (MBE) system with in situ structural characterizations to achieve high quality chalcogenide materials.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502210117
Entities
People
- Jayakanth Ravichandran
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Southern California