(YIP) GROWTH OF 2D (SN, GE) SE FOR HIGH RESPONSE PLEZOELECTRIC AND FERROELECTRIC ELECTRONICS
Abstract
Polarization can be used to modulate charge transport in field effect transistors, enhance charge separation in optoelectronics, and create THz emissions. The goal of this project is to determine how polarization influences charge transport in optoelectronics. To do this we will develop monolayer (Sn,Ge)Se thin films, where the unique layer and strain dependent polarization allows for the isolation of different contributions to charge transport. The strain induced polarization is expected to be large given that the piezoelectric coefficient for SnSe and (Sn,Ge)Se is projected to be higher than any currently known 2D material and to even rival some commonly used low loss, 3D piezoelectrics. The different contributions of polarization to charge transport, from the domain structure, shift currents, and Schottky barrier height modulation, will be investigated through electric and electrooptic measurements under strain. This work is designed to provide insight into the cross-coupling between intrinsic (ferroelectric) or strain induced (piezoelectric) polarization and the electrical properties in 2D materials. This work leverages our previous experience in materials discovery, preliminary results on this material in specific, and an expertise in piezoelectric metrology development and electrical characterization. Developing SnSe will allow us to study the cross coupling of functionalities that rarely occur in a single material, that could allow us to create new classes of simultaneously multifunctional material such as 2D electronics, piezotronics, optoelectronics, and flexoelectrics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2023
- Source ID
- FA95502210237
Entities
People
- Lauren Garten
Organizations
- Air Force Office of Scientific Research
- Georgia Tech Research Corporation
- United States Air Force