HIGH-FIELD TRANSPORT AND NOISE IN NOVEL BORON-V SEMICONDUCTORS FROM FIRST PRINCIPLES: ADVANCING THE SCIENCE OF TEST AND EVALUATION FOR MICRO ELECTRONIC DEVICES
Abstract
The intrinsic high-field transport and noise properties upon which T&E methods will be based remain completely unknown. Team will use a first-principles approach developed to investigate the microscopic electron-phonon interactions that govern high-field transport and noise in these compounds. Further, Team will extend this method to include light-matter interactions, permitting rigorous interpretation of spectroscopic measurements. The approach will enable parameter-free predictions that can be experimentally tested even on the low quality samples that are presently available, allowing the microscopic charge transport processes to be discerned in the actual materials. The outcome will be a disruptive advance in the fundamental understanding of high-field charge transport processes in this novel class of emerging semiconductors that will inform future T&E efforts based on their intrinsic charge transport characteristics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210286
Entities
People
- Austin Minnich
Organizations
- Air Force Office of Scientific Research
- California Institute of Technology
- United States Air Force