HIGH TEMPERATURE III-NITRIDE TECHNOLOGY FOR RF AND PRESSURE SENSORS
Abstract
This project will study the basic science and technology to enable the first RF amplifiers capable of operating above 500C at frequencies in excess of 1 GHz. The proposed work will include: 1. Fundamental transport studies to understand the impact of the epitaxial structure on the electron mobility at high temperatures; 2. Research on impact of high temperature on key material properties including thermal stability and high temperature degradation of heterostructures, buffer layer, contact, and passivation; 3. TCAD-based device/process-level simulations to understand the limiting factors in device structure and process technologies at high temperature; 4. Experimental demonstration of the technology and device structures needed for high frequency operation; and 5. Comprehensive in-situ high temperature characterization of the fabricated devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210367
Entities
People
- Tomás Palacios
Organizations
- Air Force Office of Scientific Research
- Massachusetts Institute of Technology
- United States Air Force